Ibrahima Djité
Ingénieur R&D optronique
I received the M.S. degree in applied physics from INPG, Grenoble, France, in 2007. Recently I received the PhD degree in electrical engineering at the Image Sensor laboratory (ISAE-CIMI). My doctoral research was founded by CNES and EADS Astrium and was focused on the analysis and modeling of charge collection in CCD et CMOS detectors and study of its impact on the MTF and on the signal to noise ratio SNR.
47 contacts2007 - 2010• Developed analytical models of QE MTF and Crosstalk for CCD and CMOS image sensors
- Built realistic models in order to predict the electro-optical performances prior to the CCD and CMOS sensors design and conception
Models include the transmittance effect of top layer stacks, doping profiles and fill factor impacts, pixels shape….
• Developed graphical interface for QE, MTF and Crosstalk simulations
Graphical interface: Performance prediction of CCD and CMOS sensors. Simulation Tools: Matlab
• Designed and Tested 4 CMOS structures layout of 3*3 photodiode array for crosstalk characterization
- 4 CMOS structures layout including various configurations Design tools Cadence Fabrication: UMC CIS 0.18μm process
- Developed low current level measurement bench for crosstalk characterization
• Designed CMOS structures for SIMS measurements
CMOS structures for measurement of doping concentration and doping profile of CMOS sensor using Secondary Ion Mass Spectroscopy (SIMS)
Design tools: Cadence Fabrication: UMC CIS 0.18μm and 0.35µm process
- SIMS data analysis and interpretation
2007 - 2007Developed and characterized coupling systems between Silicon waveguide integrated and optic fibers
Developed a test bench for TeraHertz spectroscopy and characterized the transmission and reflexion properties of various semiconductor materials in the THz band